2N3819 JFET

The 2N3819 JFET is a small signal N-channel junction field-effect transistor designed for use in high-frequency amplifier and oscillator applications. This transistor features low input and output capacitance, making it ideal for high frequency applications. With a maximum power dissipation of 350mW and a maximum drain-source voltage of 25V, the 2N3819 JFET is both reliable and durable. Its compact TO-92 package makes it easy to integrate into your circuit designs, and its low noise and high gain characteristics make it a top choice for RF amplification.